System and method for fine pitch PoP structure

ABSTRACT

A fine pitch package-on-package (PoP), and a method of forming, are provided. The PoP may be formed by placing connections, e.g., solder balls, on a first substrate having a semiconductor die attached thereto. A first reflow process is performed to elongate the solder balls. Thereafter, a second substrate having another semiconductor die attached thereto is connected to the solder balls. A second reflow process is performed to form an hourglass connection.

BACKGROUND

Since the invention of the integrated circuit (IC), the semiconductorindustry has experienced rapid growth due to continuous improvements inthe integration density of various electronic components (i.e.,transistors, diodes, resistors, capacitors, etc.). For the most part,this improvement in integration density has come from repeatedreductions in minimum feature size, which allows more components to beintegrated into a given area.

These integration improvements are essentially two-dimensional (2D) innature, in that the volume occupied by the integrated components isessentially on the surface of the semiconductor wafer. Although dramaticimprovement in lithography has resulted in considerable improvement in2D IC formation, there are physical limits to the density that can beachieved in two dimensions. One of these limits is the minimum sizeneeded to make these components. Also, when more devices are put intoone chip, more complex designs are required.

In an attempt to further increase circuit density, three-dimensional(3D) ICs have been investigated. In a typical formation process of a 3DIC, two dies are bonded together and electrical connections are formedbetween each die and contact pads on a substrate. For example, oneattempt involved bonding two dies on top of each other. The stacked dieswere then bonded to a carrier substrate and wire bonds electricallycoupled contact pads on each die to contact pads on the carriersubstrate.

Another 3D package utilized packaging-on-packaging (PoP) or interposertechniques for stacking dies to reduce form factor. PoP includes a firstdie electrically coupled to a silicon interposer, with another packageddie placed over the first die and electrically coupled to the siliconinterposer. The silicon interposer is then electrically coupled toanother substrate, such as a printed circuit board.

BRIEF DESCRIPTION OF THE DRAWINGS

For a more complete understanding of the embodiments, and the advantagesthereof, reference is now made to the following descriptions taken inconjunction with the accompanying drawings, in which:

FIGS. 1-5 illustrate various intermediate stages of forming anembodiment.

DETAILED DESCRIPTION OF ILLUSTRATIVE EMBODIMENTS

The making and using of the embodiments of the disclosure are discussedin detail below. It should be appreciated, however, that the embodimentsprovide many applicable inventive concepts that can be embodied in awide variety of specific contexts. The specific embodiments discussedare merely illustrative of specific ways to make and use theembodiments, and do not limit the scope of the disclosure.

Referring first to FIG. 1, there is shown a cross-section view of afirst substrate 108 and a second substrate 104 in accordance with anembodiment. In an embodiment, the first substrate 108 is a component ofa package 100, which may include, for example, a first integratedcircuit die 106 mounted on the first substrate 108 via a first set ofconductive connections 110. The first set of conductive connections 110may comprise, for example, lead free solder, eutectic lead, conductivepillars, combinations thereof, and/or the like.

The first substrate 108 may be, for example, a packaging substrate, aprinted-circuit board, a high-density interconnect, or the like. Throughvias (TVs) (not shown) may be used to provide electrical connectionsbetween the first integrated circuit die 106 and a first set ofconductive features 112 on an opposing surface of the first substrate108. The first substrate 108 may also include redistribution lines(RDLs) (not shown) within and/or on one or both surfaces of the firstsubstrate 108 to allow for a different pin configuration as well aslarger electrical connections. An encapsulant or overmold 114 may alsobe formed over the components to protect the components from theenvironment and external contaminants.

The second substrate 104 may further have a second integrated circuitdie 102 mounted thereon, in accordance with an embodiment. As will bediscussed in greater detail below, the package 100 will be electricallycoupled to the second substrate 104, thereby creating aPackage-on-Package (PoP).

The second substrate 104 further includes a second set of conductivefeatures 116 on a same surface of the second substrate 104 upon whichthe second integrated circuit die 102 is mounted and a third set ofconductive features 118 along an opposing surface of the secondsubstrate 104 from the second integrated circuit die 102. In thisembodiment, the second substrate 104 provides an electrical connectionbetween the first integrated circuit die 106 and the second integratedcircuit die 102, and/or between the third set of conductive features 118of the second substrate 104 and one or both of the first integratedcircuit die 106 and the second integrated circuit die 102 via asubsequently formed set of conductive connections (see FIG. 5). TVs (notshown) in the second substrate 104 provide an electrical connectionbetween the second set of conductive features 116 and the third set ofconductive features 118. The second substrate 104 may also include RDLs(not shown) within and/or on one or both surfaces of the secondsubstrate 104 to allow for a different pin configuration as well aslarger electrical connections. In an embodiment, the second substrate104 may be any suitable substrate, such as a silicon substrate, anorganic substrate, a ceramic substrate, a dielectric substrate, alaminate substrate, or the like.

As illustrated in FIG. 1, the second integrated circuit die 102 iselectrically coupled to some of the conductive features of the secondset of conductive features 116 on the second substrate 104 via a secondset of conductive connections 120. The second set of conductiveconnections 120 may comprise, for example, lead free solder, eutecticlead, conductive pillars, combinations thereof, and/or the like.

The second integrated circuit die 102 and the first integrated circuitdie 106 may be any suitable integrated circuit die for a particularapplication. For example, one of the second integrated circuit die 102and the first integrated circuit die 106 may be a memory chip, such as aDRAM, SRAM, NVRAM, and/or the like, while the other die may be a logiccircuit.

Referring now to FIG. 2, a flux 230 is applied to the surface of thesecond substrate 104 and third set of conductive connections 232 areapplied in electrical contact to the second set of conductive features116, in accordance with an embodiment. The flux 230 may be applied by,for example, in a dipping operation in which the surface of the secondsubstrate 104 is dipped in a flux. The flux helps clean the surface ofthe second set of conductive features 116, thereby aiding in formationof an electrical contact between the second set of conductive features116 and the third set of conductive connections 232.

In an embodiment the third set of conductive connections 232 comprise aninterior core having a softer exterior surface. For example, the thirdset of conductive connections 232 may be a Cu core or plastic coresolder ball. In this embodiment, the solder balls have a Cu core or aplastic core with a solder exterior, such as a eutectic solder, leadfree solder, or the like exterior. The solder exterior has a lowermelting temperature than the interior core such that the interior coremay retain its shape while the exterior shape may be reformed during asubsequent reflow process.

FIG. 3 illustrates the third set of conductive connections 232 after afirst reflow process in accordance with an embodiment. As illustrated inFIGS. 2 and 3, the first reflow process results in transforming thethird set of conductive connections 232 from a relative ball shape inFIG. 2 to a bullet shape in FIG. 3. In an embodiment, the first reflowprocess is performed using an induction reflow process. The inductionreflow process may be performed such that the magnetic field(represented by dotted lines 336 in FIG. 3) is perpendicular to themajor surface of the second substrate 104. Performing the inductionreflow process in this manner will help elongate the third set ofconductive connections 232 (such as the solder exterior of theconnector). The current used during the induction reflow process may beadjusted to achieve the desired shape for a particular application. Inother embodiments, however, other reflow processes, such as rapidthermal processing (RTP), infra-red (IR), and the like may also be used.

FIG. 3 further illustrates formation of a molding compound 340 appliedon the second substrate 104 in accordance with an embodiment. In anembodiment, the molding compound 340 is a molding underfill (MUF)comprising, for example, a polymer, epoxy, and/or the like. The moldingcompound 340 may be in contact with the top surface and the edges of thesecond integrated circuit die 102. The molding compound 340 may bemolded onto the second integrated circuit die 102 and the secondsubstrate 104 using, for example, compressive molding or transfermolding. The embodiment illustrated in FIG. 3 has a top surface of themolding compound 340 coplanar with a top surface of the secondintegrated circuit die 102. In other embodiments, a top surface of themolding compound 340 may be higher than a top surface of the secondintegrated circuit die 102 such that the second integrated circuit die102 may be fully encapsulated in the molding compound 340. Optionally, agrinding or polishing process may be performed to remove portions of themolding compound 340 from over a top surface of the second integratedcircuit die 102 to expose the second integrated circuit die 102.

FIG. 4 illustrates the package 100 after an initial bonding step tobring the first set of conductive features 112 of the first substrate108 into contact with the third set of conductive connections 232 (e.g.,the solder balls) in accordance with an embodiment. A flux (not shown inFIG. 4) may also be used to clean the surfaces of the first set ofconductive features 112 of the first substrate 108 and/or the third setof conductive connections 232, aiding in formation of an electricalconnection.

FIG. 5 illustrates a shape of the third set of conductive connections232 after a second reflow process has been performed in accordance withan embodiment. As illustrated in FIG. 5, the second reflow processresults in the third set of conductive connections 232 obtaining anhourglass shape. In an embodiment, the second reflow process isperformed using an induction reflow process such that the magnetic field(represented by dotted lines 542 in FIG. 5) is perpendicular to themajor surface of the second substrate 104. Performing the inductionreflow process in this manner will help elongate the third set ofconductive connections 232 (such as the solder exterior of theconnector). Elongating the exterior portions of the third set ofconductive connections 232 helps create the hourglass shape asillustrated in FIG. 5. The current used during the induction reflowprocess may be adjusted to achieve the desired shape for a particularapplication. In other embodiments, however, other reflow processes, suchas RTP, IR, and the like may also be used.

In an embodiment, individual ones of the third set of conductiveconnections 232 has a width W along a mid-section and a height H asillustrated in FIG. 5. In an embodiment, a ratio of H to W (H/W) is fromabout 1.0 to about 4.0. It has been found that forming connections suchas these using the reflow processes discussed above to create a bulletshape and then an hourglass shape allows a higher density of connectors.For example, by utilizing relatively long and narrow connections, theconnections may be high enough to accommodate PoP configurations asillustrated in FIG. 5, yet still have a high density to accommodate theshrinking trends of semiconductor devices in the industry. The use of anhourglass shape also reduces the likelihood of adjacent connectorsshorting together.

It should be understood that the above description provides a generaldescription of embodiments and that embodiments may include numerousother features. For example, embodiments may include under bumpmetallization layers, passivation layers, molding compounds, additionaldies and/or substrates, and the like. Additionally, the structure,placement, and positioning of the first integrated circuit die 106 andthe second integrated circuit die 102 are provided for illustrativepurposes only, and accordingly, other embodiments may utilize differentstructures, placements, and positions.

It should also be understood that the ordering of the various stepsdiscussed above are provided for illustrative purposes only, and assuch, other embodiments may utilize different sequences. These variousorderings of the step are to be included within the scope ofembodiments.

In an embodiment, the first set of conductive features 112 on the firstsubstrate 108 and the second and third set of conductive features 116and 118 on the second substrate 104 may be arranged in a ball grid array(BGA) arrangement.

Thereafter, other normal processes may be used to complete the package100. For example, the second substrate 104 may be attached to yetanother substrate, such as a printed circuit board (PCB), a high-densityinterconnect, a silicon substrate, an organic substrate, a ceramicsubstrate, a dielectric substrate, a laminate substrate, anothersemiconductor package, or the like.

In an embodiment, a semiconductor device is provided. The semiconductordevice comprises a first substrate having a first semiconductor diecoupled thereto, a second substrate having a second semiconductor diecoupled thereto, and a plurality of electrical connections electricallycoupling the first substrate to the second substrate. Each of theplurality of electrical connections has a height to width ratio ofbetween about 1 to about 4.

In another embodiment, a semiconductor device is provided. Thesemiconductor device comprises a first substrate having a firstsemiconductor die coupled thereto, a second substrate having a secondsemiconductor die coupled thereto, and a plurality of electricalconnections electrically coupling the first substrate to the secondsubstrate. Each of the plurality of electrical connections has anhourglass shape.

In yet another embodiment, a method of forming a semiconductor device isprovided. The method comprises providing a first substrate having afirst semiconductor die attached thereto; providing a second substratehaving a second semiconductor die attached thereto; placing a pluralityof electrical connections on the first substrate; performing a firstreflow process to elongate the plurality of electrical connections;contacting the second substrate to the plurality of electricalconnections; and performing a second reflow process, forming each of theplurality of electrical connections into a shape have a wider portion ina middle region as compared to regions contacting the first substrateand the second substrate.

Although the present disclosure and its advantages have been describedin detail, it should be understood that various changes, substitutions,and alterations can be made herein without departing from the spirit andscope of the embodiments as defined by the appended claims. Moreover,the scope of the present application is not intended to be limited tothe particular embodiments of the process, machine, manufacture,composition of matter, means, methods, and steps described in thespecification. As one of ordinary skill in the art will readilyappreciate from the disclosure, processes, machines, manufacture,compositions of matter, means, methods, or steps, presently existing orlater to be developed, that perform substantially the same function orachieve substantially the same result as the corresponding embodimentsdescribed herein may be utilized according to the present disclosure.Accordingly, the appended claims are intended to include within theirscope such processes, machines, manufacture, compositions of matter,means, methods, or steps.

What is claimed is:
 1. A method of forming a semiconductor device, themethod comprising: providing a first substrate having a firstsemiconductor die attached thereto; providing a second substrate havinga second semiconductor die attached thereto; placing a plurality ofelectrical connections on the first substrate; performing a first reflowprocess to elongate the plurality of electrical connections; contacting,after the performing the first reflow process, the second substrate tothe plurality of electrical connections; and performing, after thecontacting, a second reflow process, forming each of the plurality ofelectrical connections into a shape having a middle region interposedbetween a first region contacting the first substrate and a secondregion contacting the second substrate, the middle region being narrowerthan the first region and the second region.
 2. The method of claim 1,wherein the first reflow process comprises an induction reflow process.3. The method of claim 1, wherein the second reflow process comprises aninduction reflow process.
 4. The method of claim 1, wherein each of theplurality of electrical connections comprises an interior core regiondifferent from an exterior material.
 5. The method of claim 4, whereinthe first reflow process reflows the exterior material without reshapingthe interior core.
 6. The method of claim 4, wherein the second reflowprocess reflows the exterior material without reshaping the interiorcore.
 7. The method of claim 4, wherein the interior core comprisescopper.
 8. The method of claim 1, further comprising forming a moldingunderfill on a surface of the first substrate.
 9. The method of claim 1,wherein the second reflow process is performed until the electricalconnections form an hourglass shape.
 10. A method of forming asemiconductor device, the method comprising: providing a firstsubstrate; providing a second substrate; placing a plurality ofelectrical connections on the first substrate; performing a first reflowprocess, the first reflow process elongating the plurality of electricalconnections; contacting, after the performing the first reflow process,the second substrate to the plurality of electrical connections; andperforming a second reflow process after the contacting, the secondreflow process electrically coupling the electrical connections to thefirst substrate and the second substrate such that the electricalconnections have a first region and a second region along the firstsubstrate and the second substrate, respectively, the first region andthe second region being wider than an intermediate region interposedbetween the first region and the second region.
 11. The method of claim10, wherein the first reflow process comprises an induction reflowprocess.
 12. The method of claim 10, wherein the second reflow processcomprises an induction reflow process.
 13. The method of claim 10,wherein each of the plurality of electrical connections comprises aninterior core region different from an exterior material.
 14. The methodof claim 13, wherein the interior core retains a shape during the firstreflow process and the second reflow process.
 15. A method of forming asemiconductor device, the method comprising: providing a firstsubstrate; providing a second substrate; placing a plurality ofelectrical connections on the first substrate; performing an elongatingprocess to elongate the plurality of electrical connections; contacting,after the performing the elongating process, the second substrate to theplurality of electrical connections; and performing a first reflowprocess, the first reflow process electrically coupling the electricalconnections to the first substrate and the second substrate such thatthe electrical connections have an hourglass shape.
 16. The method ofclaim 15, wherein the elongating process comprises a second reflowprocess.
 17. The method of claim 16, wherein the second reflow processcomprises an induction reflow process.
 18. The method of claim 17,wherein the first reflow process comprises an induction reflow process.19. The method of claim 15, wherein each of the plurality of electricalconnections comprises an interior core region different from an exteriormaterial.
 20. The method of claim 15, wherein each of the plurality ofelectrical connections having a height to width ratio of between 1 and 4after the first reflow process.